ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,132, issued on April 14, was assigned to Micron Technology Inc. (Boise, Idaho). "Methods of forming microelectronic devices, and related m... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,133, issued on April 14, was assigned to Micron Technology Inc. (Boise, Idaho). "Slow charge loss monitor for power up performance boostin... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,134, issued on April 14, was assigned to Greenliant IP LLC (Santa Clara, Calif.). "NOR memory cell with floating gate" was invented by Bin... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,135, issued on April 14, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Uniform GIDL current during NAND erase" was invent... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,136, issued on April 14, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris), CENTRE NATIONAL DE LA RECH... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,137, issued on April 14, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory systems, operating methods, and read... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,138, issued on April 14, was assigned to Micron Technology Inc. (Boise, Idaho). "Partial block read voltage offset" was invented by Zhongg... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,139, issued on April 14, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Non-volatile memory with high performance read" wa... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,140, issued on April 14, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan). "Soft programming method and erasing method fo... Read More
ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,141, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Memory system and operating method thereof... Read More